I. Journal Papers

1.

T.S.Chao, C.L.Lee, and T.F.Lei, 1991, 
" Measurement of Ultra-thin(<100A° ) Oxide Film by Multiple-Angle Incidence Ellipsometry ", 
J. of Electrochemical Society, Vol.138, pp.1756-1760, 1991

C.L.Lee, T.F.Lei, J.H.Ho and W.T.Wang, 1991,
 " A Real-Time C-V Measurement Circuit for MOS Capacitors Under Current Stressing ",
 IEEE Trans. on Instr. & Measurement, Vol.40, 
pp.775-777, 1991

S.L. Wu, C.L. Lee, T.F. Lei, and L.J. Chen, 1992,
 " Investigation on the Interface of the Polycrystalline Silicon Contacted Diode Formed with a Stacked Amorphous Silicon Film ", 
J. of Electronic Materials, 21, pp.511-816, 1992

W.L. Yang, T.F. Lei, C.T. Hwang, and C.L. Lee, 1992,
 " The Impact of Titianium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Poly Silicon ",
 J. of App. Phys., 32, pp.399-403, 1992

S.L.Wu, C.L. Lee, and T.F. Lei, 1992, 
" High-Performance Polysilicon Contacted Shallow Junction Formed by Stacked-Amorphous-Silicon Films ",
 IEEE Device Lett.,EDL-13, pp.23-25, 1992

T.S.Chao, C.L.Lee, and T.F.Lei, 1992, 
" A Study on the Interfacial Layer of Al and Al(1%Si)-Si Contacts by Using Zeroth-Layer Model of Ellipsometry ", Solid-State Electronics, 35, pp.1579-1584, 1992

S.L.Wu, C.L.Lee, T.F.Lei, and M.S.Liang, 1992, 
" Characterization of Ultra-Thin Oxide Prepared by Low-Temperature Wafers Loading and Nitrogen Pre-Annealing before Oxidation ",
 J. of Appl. Phys., 72, pp.1378-1385 , 1992

T.S. Chao, C.L. Lee, T.F. Lei, and Y.T. Yen, 1992, 
" Poly-Oxide/Poly-Si/SiO₂/Si Structure for Ellipsometry Measurement ", 
IEE Electronics Letters, 28, pp.1144-1145, 1992

T.S.Chao, C.L.Lee and T.F.Lei, 1993, 
" The Refractive Index of InP and Its Oxide Measured by Multiple Angle Incident Ellipsometry ", 
J. of Materials Science Letts., Vol.12, pp.721-723, 1993

T.S.Chao, C.L.Lee, and T.F.Lei, 1993, 
" Ellipsometry Study on Refractive Index Profiles of the SiO₂/Si₃N₄/SiO₂/Si Structure ",
 J. of Appl. Phys., 73, pp.1732-1736, 1993

H.N.Chern, C.L.Lee and T.F.Lei, 1993,
 " H₂/O₂ Plasma on Polysilicon Thin Film Transistor ", 
IEEE Electron-Device Lett., 14, pp.115-117, 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993, 
" Electrical Characteristics of Textured Polysilicon Oxide Prepared by a Low Temperature Wafer Loading and N₂ Pre-Annealing Process ", 
IEEE Electron-Device Lett., 14, pp.115-116 , 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993, 
" Characteristics of Polysilicon Contacted Shallow Junction Diode Formed with a Stacked Amorphous Silicon Film ", IEEE Trans. on Electron-Device, Vol. 40, pp.1797-1804, 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993, 
" Ultrathin Textured Polycrystalline Oxide with High Electron Conduction Efficiency Prepared by Thermal Oxidation of a Thin Polycrystalline Silicon Film on n⁺ Polycrystalline Silicon ", Appl. Phys. Lett., 62, pp.3491-3492 , 1993

T.S.Chao, C.L.Lee, and T.F. Lei, 1993, "
 Characterization of Semi-Insulation Polycrystalline Silicon (SIPOS) Prepared by Low-Pressure Chemical Vapor Deposition ", 
J. of Electrochem. Society, Vol.140, pp.2645-2648, 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993,
 " Tunnel Oxide Prepared by Thermal Oxidation of Thin Polysilicon Film on Silicon (TOPS) ",
 IEEE Trans. on Electron-Device Lett., EDL-14, pp.379-381, 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993, 
" Thin Oxide Grown on a Heavily-Doped Substrate by Using a Low-Temperature Wafer Loading and N₂ Preannealing Process ", 
Solid-State Electron., Vol. 36, pp.1725-1730, 1993

H.N.Chern, C.L.Lee and T.F.Lei, 1993, 
" The Effects of H₂-O₂-Plasma Treatment of Polysilicon Thin Film Transistors ", 
IEEE Trans. on Electron-Device., Vol. 40, pp.2301-2306, 1993

S.L.Wu, C.L.Lee and T.F.Lei, 1993, 
" Electrical Characteristics of a Stacked Nitride/ Micro- crystalline-Silicon/Oxide/Silicon Structure ",
 Appl. Phys. Lett., 63, pp.24-26, 1993

T.S.Chao, C.L.Lee and T.F.Lei, 1993,
 "Thickness Determination of Poly-Si/Poly-Oxide/Poly-Si/ SiO2/Si Structure by Ellipsometry",
 Electronics Lett., Vol. 29, pp.1157-1159, 1993

H.N.Chern, C.L.Lee and T.F.Lei, 1994, 
" Correlation of Polysilicon Thin Film Transistor Characteristics to Defect State via Thermal Annealing ",
 IEEE Trans. on Electron-Device., Vol. 40, pp.460-462, 1994

H.N.Chern, C.L.Lee, and T.F.Lei, 1994, 
" The Effects of Fluorine Passivation on Polysilicon Thin Film Transistors ", 
IEEE Trans. on Electron Devices, Vol-41, pp.698-702, 1994

S.L.Wu, C.L.Lee, and T.F.Lei, 1994, 
" Enhancement of Oxide Break Up by Implantation of Fluorine in Poly-Si Emitter Contacted P⁺-N Shallow Junction Formation ",
 IEEE Electron Device Lett., Vol.15, pp.120-122, 1994

H.N.Chern, C.L.Lee, and T.F.Lei, 1994, 
" Improvement of Polysilicon Oxide Characteristics by Fluorine Incorporation ", 
IEEE Electron Device Lett., Vol.15, pp.181-182, 1994

S.L.Wu, C.L.Lee, T.F.Lei, L.F.Chen and L.J.Chen, 1994,
 " Suppression of the Boron Penetration Induced Si/SiO2 Interface Degradation by Using a Stacked-Amorphous-Silicon Film as the Gate Structure for pMOSFET ", 
IEEE Electron Device Lett., Vol.15, pp.160-162, 1994

T.S.Chao, C.L.Lee, and T.F.Lei, 1994, 
" Multiple Angle Incident Ellipsometry Measurement on Low Pressure Chemical Vapor Deposited Amorphous Silicon and Poly Silicon ",
 J. of Electrochemical Society, Vol. 141, pp.2146-2151, 1994

C.K.Yang and C.L. Lee, T.F.Lei, 1994, 
"The Combined Effects of Low Pressure NH3-Annealing 
and H2 Plasma Hydrogenation on Polysilicon Thin Film Transistors", 
IEEE Electron Device Lett., Vol.15, pp.389-390, 1994

T.S.Chao, T.F.Lei, C.Y.Chang and C.L.Lee, 1994, 
" Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry ",
 Jpn. J. Appl. Phys.,33, pp.2031-2034, 1994

W.C.Huang, T.F.Lei, and, C.L.Lee, 1994, " 
Pd-Ge Contact to n-GaAs with the TiW Diffusion Barrier ",
 J. of Electronic Materials, 23, pp.397-401, 1994

Y.H. Lin, C.L. Lee, and T.F. Lei, 1995,
 " Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS ",
 IEEE Electronic Device Lett., EDL-16, pp.164-165, 1995

Y.H. Lin, C.L. Lee, and T.F. Lei, 1995, 
" Suppression of Boron Penetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate ",
 Jpn. J. of Appl. Phys., 34, pp.752-756, 1995

W.C. Huang, T.F. Lei, and C.L. Lee, 1995, 
" A Double Metal Structure Pt/Al/n-InP Diode ", 
J. of Appl. Phys. , 78(1), pp.291-294, 1995

B. Chen and C.L. Lee, 1995, 
" Universal Test Set Generation for CMOS ", 
J. of Electronic Testing: Theory and Applications, Vol.6, No.3, pp.313-323, 1995

W.C. Huang, T.F. Lei, and C.L. Lee, 1995,
 " High Barrier Pt/Al/n-InP Diode ", 
Electronics Lett., 31(11), pp.924-925, 1995

H.N. Chern, C.L. Lee, and T.F. Lei, 1995,
 " An Analytical Model for the above Threshold Characteristics of Polysilicon Thin-Film Transistors ",
 IEEE Trans. on Electron Devices, 42(7), pp.1240-1246, 1995

C.S. Lai, T.F. Lei, and C.L. Lee, 1995, 
" Enhanced H2-Plasma Defects on Polysilicon Thin-Film Transistors with Thin ONO Gate Dielectrics ",
 IEEE Electron Device Lett., Vol.16, pp.228-229, 1995

Y.H. Lin, C.L. Lee, and T.F. Lei, 1995, 
" Nitridization of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS ", 
IEEE Electron Device Lett., Vol.16, pp.248-249, 1995

B.W. Liu, Y.H. Wu, C.L. Lee, and T.F. Lei, 1995,
 " Thickness Effect on Hydrogen Plasma Treatment on Polycrystalline Silicon Thin Film ", 
Appl. Phys. Lett., 66(22), pp.3013-3014, 1995

C.S. Lai, T.F. Lei, C.L. Lee, and T.S. Chao, 1995, 
" The Electrical Characteristics of Polysilicon Oxide Grown in Pure N₂O ",
 IEEE Electron Device Lett., Vol.16, pp.385-386, 1995

C.S. Lai, T.F. Lei, C.L. Lee, and T.S. Chao, 1995, 
" Post Polysilcon Gate-Induced Degradation on Thin Gate Oxide ",
 IEEE Electron Device Lett., EDL-16, pp.470-472, 1995

B.W. Liu, C.L. Lee, and T.F. Lei, 1995,
 " High Breakdown Voltage Schottky Barrier Diode ", Electronics Letters, 31(22), pp.1950-1951, 1995

C.K.Yang, C.L.Lee, T.F. Lei, and H.N.Chern, 1995,
 " Radiation Effects on N-Channel Polycrystalline Silicon Thin-Film Transistors ", 
Appl. Phys. Lett., 67(23), pp.3477-3479, 1995

C.K.Yang, T.F. Lei, and C.L.Lee, 1995,
 " Characteristics of Top-Gate Thin-Film Transistors Fabricated on Nitrogen-Implanted Polysilicon Films ",
 IEEE Trans. on Electron Devices, 42(12), pp.2163-2196, 1995

II. Conference Papers

W.L. Yang, J.J. Liaw, T.F. Lei, and C.L. Lee, 1991,
 "Study on Several Novel Technologies for Ultra-Shallow Junction Formation and the Evaluation of Their Electrical Characteristics",
 R.O.C. Electronic Devices and Material Symposium, R.O.C., pp.71-75

T.S. Chao, Y.T. Yen, C.L. Lee, and T.F. Lei, 1991, "Ellipsomery Measurement on the Poly-Oxide/Poly-Si/Oxide/Silicon Structures",
 R.O.C. Electronic Devices and Materials Symposium, pp.111-114

W.L. Yang, T.F. Lei, J.T. Hwang, and C.L. Lee, 1992,
 "The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Poly Silicon",
 Int. Conf. on Solid State Devices and Materials, pp.413-415

S.L.Wu, C.Y. Chen, C.L. Lee, T.F. Lei, and T.Y. Lin, 1992,
"Polarity Asymmetry of Electrical Characteristics of Textured Polysilicon Oxide Grown by a Low-Temperature Pre-Annealing Process" ,
Int. Conf. on Solid State and Integrated Circuit Tech., pp.119-121

H.N. Chern, C.L. Lee, and T.F. Lei, 1992,
 "Effects of H2 and O2 Plasma on Polysilicon Thin Film Transistor (TFT)" ,
 Int. Conf. on Solid State and Integrated Circuit Tech., pp.573-575

H.N. Chern, C.L. Lee, and T.F. Lei, 1992,
"The Effects of Active-Layer Thickness and Hydrogenation on Double Gate Polysilicon TFT",
 International Electronic Devices and Materials Symposium, pp.165-169

C.T. Huang, W.L. Yang, T.F. Lei, and C.L. Lee, 1992, "Study on Ti-Polycided P+-n Shallow Junctions Formed by Out-diffusion of BF2+ from Polysilicon",
International Electronic Devices and Materials Symposium, pp.388-391

T.S. Chao, C.L. Lee, and T.F. Lei, 1992,
"Ellipsometry Study on Refractive Index Profiles of the SiO2/Si3N4/SiO2/Si (ONO) Structure,"
 Int. Conf. on Solid State Integrated Circuit Tech., pp.305-307

S.L. Wu, C.L. Lee, and T.F. Lei, 1992,
"Characteristics of Polysilicon Contacted Shallow Junction Diode Formed with a Stacked-Amorphous-Silicon Film",
Int. Conf. on Solid State and Integrated Circuit Tech., pp.208-210

T.S. Chao, W.H. Chen, J.H. Ho, H.Y. Chang, S.C. Sun, T.F. Lei, and C.L. Lee, 1993,
"Characterization the Interfacial Layer of N2O Oxide by Using Ellipsometer and FTIR",
 Int. Conf. on Solid State Devices and Materials, pp.636-638

W.L. Yang, T.F. Lei, and C.L. Lee, 1993,
"Hydrogenation Effects on the Specific Contact Resistivity of Al (1% Si) and TiSi2 Contact to the Polysilicon",
Int. Conf. on Solid State Devices and Materials, pp.633-635

S.L. Wu, C.L. Lee, and T.F. Lei, 1993,
"Suppression of Boron Penetration into an Ultra Thin Gate Oxide (≦7 nm) by Using a Stacked-Amorphous-Silicon (SAS) Film",
Digest. International Electronic Devices Meeting, pp.329-332.

H.N. Chen, C.L. Lee, and T.F. Lei, 1993,
"An Analytical Mode for the above-Threshold Characteristics of Polysilicon Thin Film Transistors",
Symp. on Semiconductor-Modeling and Simulation, pp.67-68

C.K. Yang, T.F Lei, and C.L. Lee, 1994,
 "The Characteristics of Ammonia-Annealed Polysilicon Thin-Film Transistors with Plasma Hydrogenation", International Electron. Device and Material Symposium, pp.17-20

T.S.Chao, C.H.Chu, C.F.Wang, T.F.Lei, and C.L.Lee, 1994,
 "Suppression of Boron Penetration in BF2+-Implanted Poly-Si Gate Using N2O and Stacked-Amorphous-Silicon (SAS) Structure",
 Int. Electron Devices and Material Symposium, pp.12-13

C.K. Yang, T.F. Lei, and C.L. Lee, 1994,
"Improved Electrical Characteristics of Thin-Film Transistors Fabricated on Nitrogen-Implanted Polysilicon Films", International Electron Device Meeting, pp.505-508

C.L. Lee, H.N. Chern, M.S. Liao, and H.M. Wang, 1995, "On Designing of 4-Valued Memory With Double-Gate TFT",
1995 International Symposium on Multi-Valued Logic, pp.187-192