期刊論文  Refereed SCI papers         

1.     PDF K. -M. Yang, J. Y. Chung, and D.-S. Lin*, In situ Error Estimation for Topographic Height Measured from Frequency-Modulated Atomic Force Microscopy, Jpn. J. Appl. Phys. Vol.46, pp. 4395-4402(2007).

 

2.     PDF Ming-Feng Hsieh, Jen-Yang Chung, Deng-Sung Lin*, and Shiow-Fon Tsay, Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 (2007).

 

 

3.     PDF K.-M. Yang, J. Y. Chung, M. F. Hsieh, S.-S. Ferng, D.-S. Lin*, and T.C. Chiang, Systematic Variations in Apparent Topographic Height as Measured by Non-contact Atomic Force Microscopy, Phys. Rev. B 74, 193313 (2006)

 

4.     PDF Shyh-Shin Ferng, Tsung-Hsi Yang, Guangli Luo, Kai-Ming Yang, Ming-Feng Hsieh and Deng-Sung Lin: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes. Nanotechnology 17, 5207 ( 2006), front cover page featured article.

 

 

5.     PDF D.-S. Lin* and T.C. Chiang,: Lin and Chiang reply. Phys. Rev. Lett. 96, 209602 ( 2006).

6.     PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, M.-F. Hsieh, and D.-S. Lin*: Evolution of the Two-Dimensional Structure Phase Transitions (3´1)→(2´1) and (1´1)→(2´1) on the Hydrogen Terminated Si(100) Surface, Jpn. J. Appl. Phys. 45, 2197 (2006).  

7.     PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin* and T.C. Chiang, Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103 (2005).

8.     PDF,J. L. Wu, Shiang-Yuang Pan, and Deng-Sung Lin*, “Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption” Phys. Rev. B 69, 045308 (2004).

9.     PDF D.-S. Lin*, J. L. Wu, S.-Y. Pan, and T.-C. Chiang, Atomistics of Ge deposition on Si(100) by atomic layer epitaxy, Phys. Rev. Lett. 90, 046102 (2003).

10. PDF M.-W. Wu, S.-Y. Pan, W.-H. Hung, and D.-S. Lin*, Thermal reactions on the Cl-terminated SiGe(100), Surf. Sci. 507, 295 (2002).

11. PDF   Deng-Sung Lin*, Meng-Wen Wu,  and Shiang-Yuan Pan, Chlorine Induced Si Surface Segregation on the Ge-terminated Si/Ge(100) Surface from Core-level Photoemission, Phys. Rev. B.  64, 233302 (2001).

12. PDF H.-W. Tsai and D.-S. Lin*, Comparison of thermal reactions of phosphine on Ge(100) and Si (100) by high-resolution core-level photoemission, Surf. Sci. 482-485, 654-658 (2001).

13. Y.-C. Pan, S. F. Wang, W.-H. Lee, W.C. Lin, C.-I. Chiang, H. Chang, H.H Hsieh, J.M. Chen, D.-S. Lin, M.-C. Lee, W.-K. Chen, and W.-H. Chen, Structural study of GN:Mg films by x-ray absorption near-edge structure spectroscopy, SOLID STATE COMMUN 117: (10) 577-582 ( 2001).

14. Y.-C. Pan, S. F. Wang, W.-H. Lee, M.-C. Lee, W.-K. Chen, W.-H. Chen, L.-Y. Jang, J.F. Lee, C.-I. Chiang, H. Chang, K.-T. Wu, and, D.-S. Lin, Gallium K-edge x-ray absorption study of Mg-doped GaN, APPL PHYS LETT 78: (1) 31-33 JAN 1( 2001).

15. PDF Ru-Ping Chen and Deng-Sung Lin, Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning-tunneling-microscopy, Surf. Sci. 454, 196-200 (2000).

16. PDF Deng-Sung Lin, Tsai-Shain Ku, and Ru-Ping Chen, Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning-tunneling-microscopy,　 Phys. Rev. B 61, 2799-2805 (2000).

17. PDF Deng-Sung Lin and Ru-Ping Chen, Hydrogen desorption kinetic measurement on the Si(100)-2x1:H surface by directly counting desorption sites, Phys. Rev. B60, R8461-8464 (1999).

18. PDF Deng-Sung Lin, Tsai-Shain Ku, and Tzeng-Jiuh Sheu, Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study, Surf. Sci., 424, 7(1999).

19. Y.-C. Pan, W.-H. Lee, C.-K. Shu, H.-C. Lin, C.-I. Chiang, H. Chang, D.-S. Lin, M.-C. Lee, and W.-K. Chen, Influence of sapphire nitridation on properties of Indium Nitride Prepared by metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys. 38, 4016 (1999).

20. PDF Perng-Hung Wu and Deng-Sung Lin, Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical vapor deposition, Phys. Rev. B15, 57, 12421-12427 (1998).

21. D.-S. Lin, Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6, Surf. Sci., 402, 831-835 (1998).

22. D.-S. Lin and P.-H. Wu, Real-time scanning tunneling microscopy observation of structural phase transition Si(100)-(2x1)→(2xn)→c(4x4), Surf. Sci. Lett. 397, 273 (1998).

23. K.-S. Huang, T.-S. Ku, and D.-S. Lin, Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge2H6, Phys. Rev. B56, 4878 (1997).

24. D.-S. Lin, T. Miller, and T.-C. Chiang, Atomic-level investigation of the growth of Si/Ge by UHV-CVD, J. Vac. Sci. Technol. A15, 919-926 (1997).

25. D.-S. Lin, K.-H. Huang, D.-W. Pi, and R.-T. Wu, Coverage-dependent thermal reactions of digermane on Si(100)-(2x1), Phys. Rev. B54, 16958-16964 (1996).

26. Hawoong Hong, R. D. Aburano, K.-S. Chung, D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, and Haydn Chen, X-Ray Truncation rod study of Ge(100) surface roughening by molecular beam homoepitaxial growth, J. Appl. Phys. 79, 6858-6864 (1996).

27. R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, X-ray study of the Ag/Si(111) interface, Surf. Sci. Lett. 339, L891-896 (1995).

28. R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, Boundary structure determination of Ag/Si(111) interface by X-ray diffraction, Phys. Rev. B52, 1839-1847 (1995).

29. E. S. Hirschorn, D.-S. Lin, E. D. Hanson, and T.-C. Chiang, Atomic burrowing and hole formation for Au growth on Ag(110), Surf. Sci. Lett. 323, L299-305 (1995).

30. M. Sieger, J. Roesler, D.-S. Lin, T. Miller, and T.-C. Chiang, Holography of Ge(111)-c(2x8) by surface core-level photoemission, Phys. Rev. Lett. 73, 3117-3120 (1994).

31. D.-S. Lin, Hawoong Hong,T. Miller and T.-C. Chiang, Growth and atomic structure of epitaxial Si films on Ge(111), Surf. Sci. 312, 213-220 (1994).

32. R. Tsu, H. Z. Xiao, Y. W. Kim, M.-A. Hasan, H. K. Birnbaum, J. E. Greene, D.-S. Lin, and T.-C. Chiang, Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(100)-(2x1) by cyclic GSMBE from Si2H6, J. Appl. Phys. 75, 240-247 (1994).

33. D.-S. Lin, E. S. Hirschorn, T. Miller, and T.-C. Chiang, Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2x8), Phys. Rev. B49, 1836-1843 (1994).

34. D.-S. Lin, T. Miller, T.-C. Chiang, R. Tsu, and J. E. Greene, Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission, Phys. Rev. B48, 11846-11850 (1993).

35. D.-S. Lin, T. Miller, and T.-C. Chiang, Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2x1), Phys. Rev. B47, 6543-6554 (1993).

36. R. Tsu, D. Lubben, T. R. Bramblett, J. E. Greene, D.-S. Lin and T.-C. Chiang, Adsorption and dissociation of Si2H6 on Ge(100)-(2x1), Surf. Sci. 280, 265-276 (1993).

37. D.-S. Lin, J. A. Carlisle, T. Miller, and T.-C. Chiang, Lin et al. reply, Phys. Rev. Lett. 69, 552 (1992).

38. D.-S. Lin, T. Miller, and T.-C. Chiang, Si indiffusion on Ge(100)-(2x1) studied by core-level photoemission, Phys. Rev. B45, 11415-11418 (1992).

39. D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, R. Tsu, D. Lubben, and J. E. Greene, Scanning-tunneling-microscopy studies of disilane and pyroltyic growth on Si(100)-(2x1), Phys. Rev. B45, 3494-3498 (1992).

40. Hawoong Hong, R. D. Aburano, D.-S. Lin, Haydn Chen, and T.-C. Chiang, X-Ray scattering study of Ag/Si(111) buried interface sturctures, Phys. Rev. Lett. 68, 507-510 (1992).

41. Hawoong Hong, W. E. McMahon, D.-S. Lin, R. D. Aburano, Haydn Chen, T.-C. Chiang, and P. Zschack, C60 encapsulation of the Si(111)-(7x7) surface, Appl. Phys. Lett. 61, 3127-3130 (1992).

42. D.-S. Lin, T. Miller, and T.-C. Chiang, Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy, Phys. Rev. B44, 10719-10723 (1991).

43. D.-S. Lin T. Miller, and T.-C. Chiang, Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2x1), Phys. Rev. Lett. 67, 2187-2190 (1991).

44. E. S. Hirschorn, D.-S. Lin, F. M. Leibsle, A. Samsavar, and T.-C. Chiang, Charge transfer and asymmetry on Ge(111)-c(2x8) studied by scanning tunneling microscopy, Phys. Rev. B44, 1403 (1991).

45. C. C. Huang, T. Min, D.-S. Lin, B. Zhou, , and J. W. Goodby, Electro-optical and thermal studies of one ferroelectric liquid-crystal compound with a polarization sign reversal, J. Phys. France 51, 1749 (1990).

46. C. C. Huang, D.-S. Lin, J. W. Goodby, M. A. Waugh, S. M. Stein, and E. Chin, Calorimetric and optical microscopic studies on one ferroelectric liquid-crystal compound with the smectic-A phase, Phys. Rev. A 40, 4153 (1989).

　
B.研討會論文

　R. Tsu, D.-S. Lin, J.E. Greene, and T.-C. Chiang, Ge segregation and surface roughening during Si growth on Ge(100)-2x1 by gas-source molecular beam epitaxy from Si2H6, Mat. Res. Soc. Proc. Vol. 280, 281(1993).